Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2003-12-25
2008-09-02
Ahmed, Shamim (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
C216S041000, C216S058000, C216S067000, C216S083000, C438S637000, C438S713000, C438S736000, C438S778000
Reexamination Certificate
active
07419613
ABSTRACT:
A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016cm2or above.
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Hayashi Hisataka
Honda Masanobu
Matsuyama Shoichiro
Nagaseki Kazuya
Ahmed Shamim
Angadi Maki
Smith , Gambrell & Russell, LLP
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