Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2008-09-02
2008-09-02
Ahmed, Shamim (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
C216S041000, C216S058000, C216S067000, C216S083000, C438S637000, C438S713000, C438S736000, C438S778000
Reexamination Certificate
active
10538064
ABSTRACT:
A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016cm2or above.
REFERENCES:
patent: 5272417 (1993-12-01), Ohmi
patent: 6593246 (2003-07-01), Hasegawa et al.
patent: 2002/0042204 (2002-04-01), Hayashi et al.
patent: 2003/0080091 (2003-05-01), Nakaune et al.
patent: 2004/0206725 (2004-10-01), Fuse et al.
patent: 05-279877 (1963-10-01), None
patent: 03-204925 (1991-09-01), None
patent: 2000-036484 (2000-02-01), None
patent: 2001-060582 (2001-03-01), None
patent: 2001-118825 (2001-04-01), None
patent: 2001-244245 (2001-09-01), None
patent: 2002-270586 (2002-09-01), None
K. Ono, Pure and Applied Chemistry, vol. 66, No. 6, (1994), pp. 1327-1334.
Translation of International Preliminary Report on Patentability (Form PCT/IPEA/409) (Jan. 2004) issued in connection with PCT/JP2003/016818.
Notification of the Recording of a Change (Corrected Version) From PCT/IGB/306 (Mar. 1994) issued in connection with PCT/JP2003/016818.
Nitification of Transmittal of Copies of Translation of the International Preliminary Report on Patentability (Chapter 1 or Chapter 11) of the Patent Cooperation Treaty (Form PCT/IG/338) (July 1996) issued in connection with PCT/JP2003/016818.
Hayashi Hisataka
Honda Masanobu
Matsuyama Shoichiro
Nagaseki Kazuya
Ahmed Shamim
Angadi Maki
Smith , Gambrell & Russell, LLP
LandOfFree
Method and device for plasma-etching organic material film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and device for plasma-etching organic material film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and device for plasma-etching organic material film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3910184