Method and composite for decreasing charge leakage

Details Method and composite for decreasing charge leakage Method and composite for decreasing charge leakage

2006-08-08

2006-08-08

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S265000, C257SE21179

Reexamination Certificate

active

07087490

ABSTRACT:
A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.

REFERENCES:
patent: 4395438 (1983-07-01), Chiang
patent: 4686552 (1987-08-01), Teng et al.
patent: 4760034 (1988-07-01), Barden
patent: 4890144 (1989-12-01), Teng et al.
patent: 4929988 (1990-05-01), Yoshikawa
patent: 4964080 (1990-10-01), Tzeng
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 5422291 (1995-06-01), Clementi et al.
patent: 5504021 (1996-04-01), Hong et al.
patent: 5583070 (1996-12-01), Liao et al.
patent: 5661687 (1997-08-01), Randazzo
patent: 5686748 (1997-11-01), Thakur et al.
patent: 5712186 (1998-01-01), Thakur et al.
patent: 5756390 (1998-05-01), Juengling et al.
patent: 5781031 (1998-07-01), Bertin et al.
patent: 5831282 (1998-11-01), Nuttall
patent: 5926739 (1999-07-01), Rolfson et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 5981404 (1999-11-01), Sheng et al.
patent: 5994734 (1999-11-01), Chou
patent: 6017791 (2000-01-01), Wang et al.
patent: 6051511 (2000-04-01), Thakur et al.
patent: 6074917 (2000-06-01), Chang et al.
patent: 6097058 (2000-08-01), Nakumura et al.
patent: 6117730 (2000-09-01), Komori et al.
patent: 6355522 (2002-03-01), Chang et al.
patent: 6368919 (2002-04-01), Nuttall et al.
patent: 6746922 (2004-06-01), Nuttall et al.
patent: 6803280 (2004-10-01), Nuttall et al.
patent: 2001/0021549 (2001-09-01), Keller et al.
patent: 2002/0090775 (2002-07-01), Nuttall et al.
patent: 2004/0209426 (2004-10-01), Nuttall et al.
patent: 7-74272 (1996-03-01), None
patent: 11-150195 (1999-06-01), None
patent: 9505267 (1995-05-01), None

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