Method and composite for decreasing charge leakage

Details Method and composite for decreasing charge leakage Method and composite for decreasing charge leakage

2006-03-07

2006-03-07

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S762000, C438S763000, C438S954000

Reexamination Certificate

active

07008845

ABSTRACT:
A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or amorphous polysilicon or a silicon rich nitride, is inserted in the gate structure. The oxide film that results from the oxidation of these films is relatively free from impurities. As a result, charge leakage between the floating gate and control gate is reduced.

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