Method and circuit for multiplying signals with a transistor...

Details Method and circuit for multiplying signals with a transistor... Method and circuit for multiplying signals with a transistor...

2005-11-29

2005-11-29

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000

Reexamination Certificate

active

06969656

ABSTRACT:
A double gate semiconductor device (2006) is used beneficially as a multiplier (2000). The double gate semiconductor device (2006) has a lateral fin (105) as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure (2106) with alternating source/drain terminals (2120, 2122, 2124, 2126) in which the sources are connected together and the drains are connected together. Gates (2116, 2110) are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier (2000) may also be used as a mixer and further as a phase detector.

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