Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-16
2010-06-22
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S211000, C438S259000, C438S261000, C438S513000, C257S314000, C257S315000, C257S316000, C257S324000, C257SE21170, C257SE21680, C257SE21585, C257SE27103, C365S185180
Reexamination Certificate
active
07741177
ABSTRACT:
A method of providing a memory cell comprises providing a semiconductor substrate including a body of a first conductivity type, first and second regions of a second conductivity type and a channel between the first and second regions; arranging a first insulator layer adjacent to the substrate; arranging a charge storage region adjacent to the first insulator layer; arranging a second insulator layer adjacent to the charge storage region; arranging a first conductive region adjacent to the second insulator layer; arranging a layer adjacent to the first conductive region; arranging a second conductive region adjacent to the layer; and increasing mechanical stress of at least one of the first and second conductive regions. The second conductive region overlaps the first conductive region at an overlap surface, and wherein a line perpendicular to the overlap surface intersects at least a portion of the charge storage region.
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