Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2008-05-06
2008-05-06
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S189011, C365S189090
Reexamination Certificate
active
07369446
ABSTRACT:
An improved cross-coupled CMOS high-voltage latch that is used for storing data bits to be written to memory cells of a non-volatile memory is provided with a switching circuit that, during writing of data bits into the memory cells of the latch, provides a high series impedance between one leg of the latch and ground to limit leakage current. A large number of latches are connected in parallel and their accumulated leakage currents are limited by the switching circuit to prevent overload of a high-voltage generator, such as a charge pump circuit, for the high-voltage latch, so that data can be properly written in the memory cells of the non-volatile memory.
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Chan Johnny
Son Jinshu
Atmel Corporation
Luu Pho M.
Schneck Thomas
Schneck & Schneck
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