Method and apparatus to prevent high voltage supply...

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Reexamination Certificate

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C365S189011, C365S189090

Reexamination Certificate

active

07369446

ABSTRACT:
An improved cross-coupled CMOS high-voltage latch that is used for storing data bits to be written to memory cells of a non-volatile memory is provided with a switching circuit that, during writing of data bits into the memory cells of the latch, provides a high series impedance between one leg of the latch and ground to limit leakage current. A large number of latches are connected in parallel and their accumulated leakage currents are limited by the switching circuit to prevent overload of a high-voltage generator, such as a charge pump circuit, for the high-voltage latch, so that data can be properly written in the memory cells of the non-volatile memory.

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patent: 6972234 (2005-12-01), Madurawe et al.
patent: 7209403 (2007-04-01), Santin
patent: 7224624 (2007-05-01), Lee et al.

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