Method and apparatus to improve thickness uniformity of...

Details Method and apparatus to improve thickness uniformity of... Method and apparatus to improve thickness uniformity of...

2005-08-09

2005-08-09

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000

Reexamination Certificate

active

06927169

ABSTRACT:
A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.

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