Method and apparatus to improve the side wall and bottom coverag

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20429806, 20429816, 20429819, 20419815, 2042982, C23C 1435

Patent

active

061431400

ABSTRACT:
The present invention provides a method and apparatus for achieving conformal step coverage in a deposition process. In at least one aspect, a target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil. At least a portion of the electrons provided by the plasma and ionized target material are deflected by a magnetic field established adjacent to the substrate. Under the influence of the attracted electrons, positively charged particles are induced to move in the direction of the electrons. The magnetic field may be provided by one or more magnets located internally or externally to the processing chamber and which can be rotated to ensure uniform deposition of the electrons and ions on the device features.

REFERENCES:
patent: 4581118 (1986-04-01), Class et al.
patent: 5431799 (1995-07-01), Mosely et al.
patent: 5444207 (1995-08-01), Sekine et al.
patent: 5858180 (1999-01-01), Hsu
patent: 5876574 (1999-03-01), Hofmann et al.
patent: 5902461 (1999-05-01), Xu et al.
patent: 5902466 (1999-05-01), Gerrish et al.
patent: 5922182 (1999-07-01), Maass et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus to improve the side wall and bottom coverag does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus to improve the side wall and bottom coverag, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus to improve the side wall and bottom coverag will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1637160

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.