Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-01
2011-03-01
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S544000, C438S640000, C438S646000, C257SE21053, C257SE21560, C257SE21288, C257SE21293, C257SE21316, C257SE21325
Reexamination Certificate
active
07897471
ABSTRACT:
A structure to diminish high voltage instability in a high voltage device when under stress includes an amorphous silicon layer over a field oxide on the high voltage device.
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Fairchild Semiconductor Corporation
FitzGerald Esq. Thomas R.
Hiscock & Barclay LLP
Nhu David
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