Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-03-08
2005-03-08
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S689000, C438S678000, C438S687000, C438S692000, C438S592000, C257S758000, C257S762000, C257S751000, C257S643000, C257S635000, C216S087000, C216S084000, C216S089000, C216S037000, C216S013000
Reexamination Certificate
active
06864181
ABSTRACT:
A planarized conductive material is formed over a substrate including narrow and wide features. The conductive material is formed through a succession of deposition processes. A first deposition process forms a first layer of the conductive material that fills the narrow features and at least partially fills the wide features. A second deposition process forms a second layer of the conductive material within cavities in the first layer. A flexible material can reduce a thickness of the first layer above the substrate while delivering a solution to the cavities to form the second layer therein. The flexible material can be a porous membrane attached to a pressurizable reservoir filled with the solution. The flexible material can also be a poromeric material wetted with the solution.
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Boyd John
Redeker Fred C.
Anya Igwe U.
Carr & Ferrell LLP
Lam Research Corporation
Smith Matthew
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