Method and apparatus providing CMOS imager device pixel with...

Details Method and apparatus providing CMOS imager device pixel with... Method and apparatus providing CMOS imager device pixel with...

2005-12-28

2008-05-06

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S311000, C257SE21435, C257SE21632, C257SE27132, C257SE27133

Reexamination Certificate

active

07368339

ABSTRACT:
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.

REFERENCES:
patent: 6204524 (2001-03-01), Rhodes
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6492694 (2002-12-01), Noble et al.
patent: 6642076 (2003-11-01), Yaung et al.
patent: 6908839 (2005-06-01), Rhodes
patent: 6949388 (2005-09-01), Park
patent: 7214575 (2007-05-01), Rhodes
patent: 2005/0040393 (2005-02-01), Hong

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