Method and apparatus of burst read and pipelined dynamic random

Electrical computers and digital processing systems: memory – Storage accessing and control – Access timing

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711104, 711105, 711111, 711170, 36518904, 36518905, 36523008, G06F 1300

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059268395

ABSTRACT:
A single-chip integrated DRAM memory system having a high density and large bandwidth. The single-chip DRAM system includes a DRAM array 10 having a plurality of pipelined stages 12, a control logic 11 for controlling said DRAM array 10 and a buffer 13 integrated onto chip for storing data being fetched from said DRAM array. The DRAM array, control logic, and the buffer are all integrated onto one and the same substrate 1. The control logic 11 generates a control signal for controlling operations taking place in the plurality of pipelined stages and the final stage of said pipeline 12 inputs/outputs data from said buffer means 13 in a burst mode.

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Takai et al., "250 Mbyte/s Synchronous DRAM Using a 3-Stage-Pipelined Architecture", Apr. 94, vol. 29, No. 4; pp. 426-431.

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