Method and apparatus for verifying the calibration of semiconduc

Details Method and apparatus for verifying the calibration of semiconduc Method and apparatus for verifying the calibration of semiconduc

1998-09-01

1999-09-07

Raevis, Robert

Measuring and testing

Instrument proving or calibrating

Volume of flow, speed of flow, volume rate of flow, or mass...

G01F 100

Patent

active

059489588

ABSTRACT:
A semiconductor processing equipment calibration verification procedure is provided that does not rely on pressure rises from laboratory reference chambers and that is insensitive to in-chamber variations that affect processing gas pressure rise but do not affect the underlying process. A baseline pressure rise ratio is computed based on an inert gas pressure rise and a processing gas pressure rise produced when an inert gas and a processing gas, respectively, are flowed into a processing chamber. Subsequent, preferably periodic, calibration verification procedures are performed and new pressure rise ratios are computed. When a new pressure rise ratio differs from the baseline pressure rise ratio by more than a predetermined amount, the calibration of the semiconductor processing equipment is rejected.

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