Method and apparatus for tuning field for plasma processing usin

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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20429815, 20429806, 20429831, 20429832, 20429834, 118723E, 118728, C23C 1450, C23C 1600, C23F 102

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057164860

ABSTRACT:
A device for reducing plasma irregularities includes an electrode assembly capable of applying an electric potential to said plasma. The electrode assembly includes a portion for reducing the plasma irregularities. The portion which reduces the plasma irregularities includes alternately a buried portion which is capable of altering the potential within the buried element, or else a conditioned portion of the surface which controls reflectivity and/or emissivity of portions of a surface of the electrode assembly differently.

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Patent Abstracts of Japan, vol. 015 No. 428 (E-1128), Oct. 30, 1991 & JP-A-03 179734 (Tokyo Electron LTD) Aug. 5, 1991.

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