Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2006-10-17
2009-08-25
Ahmed, Shamim (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S058000, C216S059000, C438S706000, C438S710000, C156S345230
Reexamination Certificate
active
07578945
ABSTRACT:
In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
REFERENCES:
patent: 5993594 (1999-11-01), Wicker et al.
patent: 5998932 (1999-12-01), Lenz
patent: 6036836 (2000-03-01), Peeters et al.
patent: 6257168 (2001-07-01), Ni et al.
patent: 6344105 (2002-02-01), Daugherty et al.
patent: 6709547 (2004-03-01), Ni et al.
patent: 7138067 (2006-11-01), Vahedi et al.
patent: 2003/0000648 (2003-01-01), Park et al.
patent: 2004/0159286 (2004-08-01), Aoki et al.
patent: 2004/0168640 (2004-09-01), Muto et al.
patent: 2005/0233590 (2005-10-01), Yao et al.
patent: 06-66299 (1994-08-01), None
patent: 06-338460 (1994-12-01), None
patent: 15-115476 (2003-04-01), None
patent: 10-2002-24620 (2002-04-01), None
“Written Opinion”, Issue in PCT Application No. PCT/US2007/081682; Mailing Date.: Mar. 14, 2008.
“International Search Report”, Issue in PCT Application No. PCT/US2007/081682; Mailing Date.: Mar. 14, 2008.
IPRP (Int'l Prelim. Report on Patentability) mailed Apr. 5, 2007 re PCT/US2005/034034.
“Notice of Allowance and Fees Due”, U.S. Appl. No. 10/951,552, Mailing Date: Jul. 17, 2006.
“International Search Report and Written Opinion”, Issue in PCT/US05/34034, mailing date Nov. 27, 2006.
Chen Anthony
Daugherty John
Singh Harmeet
Vahedi Vahid
Ahmed Shamim
IP Strategy Group, P.C.
Lam Research Corporation
LandOfFree
Method and apparatus for tuning a set of plasma processing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for tuning a set of plasma processing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for tuning a set of plasma processing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4138322