Method and apparatus for treating wafer edge region with...

Details Method and apparatus for treating wafer edge region with... Method and apparatus for treating wafer edge region with...

2008-07-29

2008-07-29

Moore, Karla (Department: 1792)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C156S345440, C156S345420, C118S7230ER

Reexamination Certificate

active

10710226

ABSTRACT:
Method and apparatus for treating an edge region of a wafer. A toroidal shaped plasma cavity has an inner diameter which is slightly less than the diameter of the wafer being treated so that only the edge region of the wafer extends into the toroidal plasma cavity. An inert gas is flowed across a front and back side of the wafer into the plasma cavity. A reactive gas is flowed directly into the plasma cavity. The gases exit the plasma cavity without flowing over the surface of the wafer.

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Title: Cleaning of Wafer Edge, Bevel and Back-Side With a Torus- Shaped Capacitively Coupled Plasma (Plasma Sources Sci. Technol. 11 (Nov. 2002) 520-524) Authors: Buil Jeon, Hong-Young Chang, Jong-Kyu Song, Chang-Won Jeon Date: Published Nov. 6, 2002 Article Enclosed.

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