Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-04-24
2007-04-24
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C257SE21224, C257SE21226
Reexamination Certificate
active
10433423
ABSTRACT:
A thermal treatment apparatus1includes a reaction tube2for containing wafers10contaminated with organic substances having a heater12capable of heating the reaction tube; a first gas supply pipe13for carrying oxygen gas into the reaction tube2; and a second gas supply pipe14for carrying hydrogen gas into the reaction tube2. Oxygen gas and hydrogen gas are supplied through the first gas supply pipe13and the second gas supply pipe14, respectively, into the reaction tube2, and the heater12heats the reaction tube2at a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tube2and thereby the organic substances adhering to the wafers10are oxidized, decomposed and removed.
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International Preliminary Examination Report (PCT/IPEA/409) (translated) issued for PCT/JP01/10594.
Notification of Transmittal of Copies of Translation of the International Preliminary Examination Report (PCT/IB/338) issued for PCT/JP01/10594.
Furusawa Yoshikazu
Hayashi Teruyuki
Hishiya Shingo
Saito Misako
Sato Syoichi
Sarkar Asok Kumar
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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