Method and apparatus for thinning a substrate

Details Method and apparatus for thinning a substrate Method and apparatus for thinning a substrate

2008-09-05

2011-11-01

Deo, Duy (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

C438S690000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

08048807

ABSTRACT:
Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.

REFERENCES:
patent: 4681657 (1987-07-01), Hwang et al.
patent: 4971654 (1990-11-01), Schnegg et al.
patent: 5801084 (1998-09-01), Beasom et al.
patent: 6569343 (2003-05-01), Suzuki et al.
patent: 6657178 (2003-12-01), Aebi
patent: 2009/0227047 (2009-09-01), Yang et al.
Reiche et al., “Wafer Thinning: Techniques for Ultra-thin Wafers,” Advanced Packaging, Mar. 2003, http://ap.pennnet.com/Articles/Article—Display, 7 pages.

Affiliated with

Also associated with

Rating

Method and apparatus for thinning a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for thinning a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for thinning a substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4279587