Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-12-26
2006-12-26
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S736000, C438S706000, C257SE21192
Reexamination Certificate
active
07153780
ABSTRACT:
A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; patterning the ARC layer; etching the hardmask layer using the patterned ARC layer as a mask; and etching the thin film stack using the hardmask layer as a mask.
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Hill Ervin T.
Karpenko Oleh P.
Marquez Linda N.
McGarvey Gordon T.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Sarkar Asok K.
Yevsikov Victor V.
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