Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2006-06-27
2006-06-27
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S795000
Reexamination Certificate
active
07067399
ABSTRACT:
A method and apparatus for removal of volatile contaminants from substrate surfaces before the substrate enters a process chamber. Substrate cleaning is achieved by irradiating the substrate with a low-energy electron beam. The interaction of the electrons in the beam with the contaminants present on the surface of the substrate causes evaporation of low vapor pressure species which can be deposited on the surface. A cryoshield pumps the evaporated species. After evaporation and pumping, the substrate passes through a glow discharge chamber wherein the negative surface charge created by the electron beam is neutralized using positive ions. The inventive apparatus can be configured so that no separate vacuum chamber is needed to prepare the substrate.
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Applied Materials Inc.
Nguyen Tuan H.
Sughrue Mion LLP
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