Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-02-09
1999-05-11
Russel, Jeffrey E.
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
118723E, 156345, 427569, C23C16/52
Patent
active
059024941
ABSTRACT:
A method and apparatus for preventing particles from dislodging from the interior of a process chamber by preventing DC bias spikes. Such DC bias spikes can be caused by variations in the power or pressure in a process chamber. DC bias spikes are prevented by ramping changes in the pressure at a rate which avoids the creation of such spikes. RF power is ramped down at a rate which avoids spikes.
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Galiano Maria
Gupta Anand
Wolff Stefan
Applied Materials Inc.
Russel Jeffrey E.
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