Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-07-31
2000-04-18
Chaudhari, Chandra
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438792, H01L 2131, H01L 21469
Patent
active
060515112
ABSTRACT:
Stress resulting from silicon nitride is diminished by forming an oxidation mask with silicon nitride having a graded silicon concentration. Grading is accomplished by changing the silicon content in the silicon nitride by varying the amount of hydride, such as dichlorosilane (DCS), mixed with ammonia. The silicon nitride can be graded in a substantially linear or non-linear fashion. Silicon nitride formed with higher levels of DCS mixed with ammonia is referred to as silicon rich nitride because of its relatively higher silicon content. In one embodiment, the graded silicon nitride may be formed with one type of non-linear silicon grading, an abrupt junction. In other embodiments, the silicon nitride is formed in a variety of shapes fashioned during or after silicon nitride growth. In one embodiment, the stress from the silicon nitride is reduced by forming a polysilicon buffer layer between two silicon nitride layers. In another embodiment, the stress from the silicon nitride is reduced by forming the silicon nitride on a pad layer, which in turn is formed on a base layer.
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Donohoe Kevin G.
Reinberg Alan R.
Thakur Randhir P. S.
Wu Zhiqiang
Chaudhari Chandra
Micro)n Technology, Inc.
Pert Evan
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