Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2011-06-14
2011-06-14
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S074000, C216S079000, C216S067000, C438S710000
Reexamination Certificate
active
07959819
ABSTRACT:
The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.
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Johnson David
Lai Shouliang
Westerman Russell
Dahimene Mahmoud
Kauget Harvey S.
Norton Nadine G
Phelps Dunbar LLP
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