Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-07-14
2008-03-04
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S196000, C365S230030
Reexamination Certificate
active
07339846
ABSTRACT:
Roughly described, a memory includes first and second target memory cells in a plurality of electrically adjacent memory cells all sharing a word line. The two target memory cells are separated from each other by at least one additional memory cell, and first current path terminals of the target memory cells bracket second current path terminals of the target memory cells electrically along the word line. The two target memory cells are read by connecting the first current path terminals of the two target memory cells to ground, precharging the second current path terminals of the two target memory cells to respective precharged states, and while both second current path terminals are in their respective precharged states, initiating a sense operation to read both the first and second target memory cells substantially simultaneously.
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Lin Yu Shen
Lin Yung Feng
Haynes Beffel & Wolfeld LLP
Le Thong Q.
Macronix International Co. Ltd.
Wolfeld Warren S.
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