Method and apparatus for reading data from nonvolatile memory

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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C365S196000, C365S230030

Reexamination Certificate

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07339846

ABSTRACT:
Roughly described, a memory includes first and second target memory cells in a plurality of electrically adjacent memory cells all sharing a word line. The two target memory cells are separated from each other by at least one additional memory cell, and first current path terminals of the target memory cells bracket second current path terminals of the target memory cells electrically along the word line. The two target memory cells are read by connecting the first current path terminals of the two target memory cells to ground, precharging the second current path terminals of the two target memory cells to respective precharged states, and while both second current path terminals are in their respective precharged states, initiating a sense operation to read both the first and second target memory cells substantially simultaneously.

REFERENCES:
patent: 4868790 (1989-09-01), Wilmoth et al.
patent: 5771196 (1998-06-01), Yang
patent: 6175523 (2001-01-01), Yang et al.
patent: 6292399 (2001-09-01), Le et al.
patent: 6341088 (2002-01-01), Sakamoto et al.
patent: 6373753 (2002-04-01), Proebsting
patent: 6510082 (2003-01-01), Le et al.
patent: 6525966 (2003-02-01), Hollmer et al.
patent: 6643177 (2003-11-01), Le et al.
patent: 6707740 (2004-03-01), Shinozaki
patent: 6731542 (2004-05-01), Le et al.
patent: 6744674 (2004-06-01), Le et al.
patent: 6768679 (2004-07-01), Le et al.
patent: 6771543 (2004-08-01), Wong et al.
patent: 6788583 (2004-09-01), He et al.
patent: 6944057 (2005-09-01), Runnion et al.
patent: 2003/0128593 (2003-07-01), Shiga et al.
Le, Binh Quang “Virtual-Ground Sensing Techniques for Fast, Low-Power, 1.8V Two-Bit-Per-Cell Flash Memories,” PhD Dissertation Stanford University Nov. 2003, 148 pages.
Le, Binh Quang, “Virtual-Ground Sensing Techniques for a 49-ns/200-MHz Access Time 1.8-V 256-Mb 2-Bit-Per-Cell Flash Memory,” IEEE J. of Solid-State Circuits 39(11) Nov. 2004, 2014-2023.
Pathak, B., et al., “A 1.8 V 64 Mb 100 MHz flexible read while write flash memory,” Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International, pp. 32-33 and 424.

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