Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-05-15
2007-05-15
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S185160, C365S185250, C365S185260
Reexamination Certificate
active
11282541
ABSTRACT:
Various embodiments address the problem of efficiently reading data from nonvolatile memory. Nonvolatile memory circuit, method, and manufacturing method embodiments relate to a virtual ground array of nonvolatile memory cells which are read by precharging the drains of multiple nonvolatile memory cells and measuring the resulting currents. Power consumption and read margins are improved by reading multiple cells. Unnecessary bit line precharging can be avoided.
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Lin Yu Shen
Lin Yung Feng
Haynes Beffel & Wolfeld LLP
Le Toan
Macronix International Co. Ltd.
Phung Anh
Suzue Kenta
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