Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-11-24
2008-09-02
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S393000, C438S396000
Reexamination Certificate
active
07419873
ABSTRACT:
The present subject matter includes a capacitor stack disposed in a case, the capacitor stack including one or more substantially planar electrode layers. The one or more substantially planar electrode layers have an etched surface, an unetched surface, and a grade bordering the etched surface and the unetched surface. Also, the present subject matter includes a lid conforming sealingly connected to the material defining the first aperture. Additionally, the present subject matter includes a feedthrough assembly connected to the capacitor stack and passing through the feedthrough hole and sealingly connected to the material defining the feedthrough hole. In the present subject matter, the one or more substantially planar electrode layers are made by printing a curable resin mask onto the one or more substantially planar electrode layers and etching the layers, the curable resin mask defining the grade and adapted to resist etching.
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Abel Jeffry
Doffing Brian
Poplett James M.
Sherwood Gregory J.
Cardiac Pacemakers Inc.
Lee Hsien-ming
Schwegman Lundberg & Woessner, P.A.
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