Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-31
2000-07-18
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, 257491, 361 56, H01L 2362, H02H 904
Patent
active
06091114&
ABSTRACT:
A semiconductor device includes a first transistor (52) and gated diode (50) formed at a face of a semiconductor layer (56). The first transistor (52) includes a source region (60a), a drain region (60b), a gate oxide layer (62), and a conductive gate (64). The gated diode (54) includes a first moat region (66a), a second moat region (66b), a gate oxide layer (68), and a conductive gate (70). A first conductor (77) connects the conductive gate (70) of the gated diode (54) to the semiconductor layer (56) and a second conductor (76) connects the moat regions (66a, 66b) of the gated diode (54) to the conductive gate (64) of the first transistor (52). Gated diode (54) has a reduced breakdown voltage relative to the gate oxide layer (62) of first transistor (52) and thus establishes a leakage path to semiconductor layer (56) to direct leakage current to semiconductor layer (56), thereby inhibiting charge from accumulating on the gate oxide layer (62) of first transistor (52).
REFERENCES:
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 5760445 (1998-06-01), Diaz
patent: 5793069 (1998-08-01), Schuelein et al.
McPherson Joe W.
Mogul Homi C.
Seshadri Anand
Strong Bob
Brady III Wade James
Donaldson Richard L.
Monin, Jr. Donald L.
Texas Instruments Incorporated
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