Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2004-04-20
2008-12-16
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C257SE21261
Reexamination Certificate
active
07465682
ABSTRACT:
A method for processing an organosiloxane film includes loading a target substrate (W) with a coating film formed thereon into a reaction chamber (2), and performing a heat process on the target substrate (W) within the reaction chamber (2) to bake the coating film. The coating film contains a polysiloxane base solution having an organic functional group. The heat process includes a temperature setting step of setting an interior of the reaction chamber (2) at a process temperature by heating, and a supplying step of supplying a baking gas into the reaction chamber (2) set at the process temperature, while activating the baking gas by a gas activation section (14) disposed outside the reaction chamber (2).
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Lindsay, Jr. Walter L
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Patel Reema
Tokyo Electron Limited
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