Method and apparatus for processing a semiconductor wafer on a r

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

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G01N 2188

Patent

active

059633158

ABSTRACT:
The present disclosure is a method for in situ monitoring of backside contamination on a semiconductor wafer (120) between processing steps which are performed in a multi-chamber tool (500). In a first form, a laser source (220) and a detector (210) are mounted on a robotic arm (110, 111), or within a semiconductor processing tool (500). The laser (220) and detector (210) move along with the robotic arm (110) as the robotic arm (110) shuffles the wafer (120) between processing carriers (610-650) and chambers (510-540). While in transit the backside of the semiconductor wafer (120) is scanned by a laser beam (221), whereby contamination is detected by a detector (210). The laser (220) and detector (210) then scan the backside of the wafer (120) while the robotic arm (110) is in transit and/or while the robotic arm (110) is stationary in the processing sequence. The absolute particle count and differential/incremental particulate counts are calculated on a chamber-by-chamber, and wafer-by-wafer basis, using a data processor (230).

REFERENCES:
patent: 4895446 (1990-01-01), Maldari et al.
patent: 5274434 (1993-12-01), Morioka et al.
patent: 5710624 (1998-01-01), Utamura
patent: 5780204 (1998-07-01), La et al.

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