Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-12-20
2000-03-07
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
156345, 118723I, H05H 100
Patent
active
060335858
ABSTRACT:
A plasma processing chamber includes a substrate holder, a gas distribution member, and a shield for preventing lightup of plasma in gas distribution holes in the gas distribution member. The chamber can include an RF energy source such as an RF antenna which inductively couples RF energy through the gas distribution member to energize process gas into a plasma state. The shield can be arranged to allow capacitive coupling of RF energy into the processing chamber for lightup of plasma in the processing chamber and/or ion bombardment of the exposed surface of the gas distribution member for cleaning thereof during processing of the substrate.
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Lamm Albert J.
Vahedi Vahid
Wicker Thomas E.
Dang Thi
Lam Research Corporation
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