Method and apparatus for post silicide spacer removal

Details Method and apparatus for post silicide spacer removal Method and apparatus for post silicide spacer removal

2011-07-12

2011-07-12

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S197000, C257SE21010, C257SE21218, C257SE21248

Reexamination Certificate

active

07977185

ABSTRACT:
A method (and apparatus) of post silicide spacer removal includes preventing damage to the silicide spacer through the use of at least one of an oxide layer and a nitride layer.

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