Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1992-01-15
1994-10-18
Chea, Thorl
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430313, 430326, 430330, G03C 516
Patent
active
053567587
ABSTRACT:
A silicon semiconductor wafer (64) is processed within a container (62) to form a positive photolithographic image thereon. The wafer is coated with a phenol-containing resin photoresist (76). The photoresist (76) is exposed to deep ultraviolet light (84) through a reticle (82) to form exposed areas (90 and 92). HMDS (94) is then diffused into the resist (76) everywhere except the exposed areas (90 and 92) which are protected by cross-linked phenol molecules. The HMDS (94) forms silicon bonds with the diffused areas (94) which are thus prevented from being etched by an oxygen reactive ion etch. The exposed areas (90 and 92) are not similarly protected and recessed areas (102 and 104) are formed. Subsequent deposition or etching may then be conducted on the substrate (74) in the recessed areas (102 and 104).
REFERENCES:
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patent: 4613398 (1986-09-01), Chiong et al.
patent: 4749436 (1988-06-01), Minato et al.
patent: 4804612 (1989-02-01), Asaumi et al.
Semiconductor International, Apr. 1987, pp. 84-91.
Deep UV Stabilization of Photoresist: A Unified Chemical Description of Process and Parameters; IBM Corporation; Klymdo, Klymdo, and Thayer.
Chea Thorl
Donaldson Richard L.
Garner Jacqueline J.
Hiller William E.
Texas Instruments Incorporated
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