Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-08-16
2008-01-01
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S514000, C257SE21006
Reexamination Certificate
active
07314829
ABSTRACT:
Some embodiments of the present invention include implanting and annealing polysilicon lines to form a silicide blocking layer that may inhibit silicide formation. The silicide blocking layer may facilitate fabrication of polysilicon resistors.
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Thompson Kirsten H.
Weiss Martin N.
Geyer Scott B.
Guglielmi David L.
Intel Corporation
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