Method and apparatus for plasma processing

Details Method and apparatus for plasma processing Method and apparatus for plasma processing

2004-07-30

2011-11-15

MacArthur, Sylvia R. (Department: 1716)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C118S7230ER

Reexamination Certificate

active

08057634

ABSTRACT:
The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

REFERENCES:
patent: 5556500 (1996-09-01), Hasegawa et al.
patent: 6199029 (2001-03-01), Ohta
patent: 6465266 (2002-10-01), Yassine et al.
patent: 6475336 (2002-11-01), Hubacek
patent: 6554954 (2003-04-01), Ma et al.
patent: 63-229719 (1988-09-01), None
patent: 05-335283 (1993-12-01), None
patent: 06-120140 (1994-04-01), None
patent: 06-168911 (1994-06-01), None
patent: 2002-198355 (2002-07-01), None
patent: 2002-203835 (2002-07-01), None
patent: 2003-503841 (2003-01-01), None
patent: 2003-519907 (2003-06-01), None
patent: 2003-229408 (2003-08-01), None
patent: WO 01/50497 (2001-07-01), None
Thevnin's Theorem. Wikipedia taken from http://en.wikipedia.org/wiki/Th%C3%A9venin's—theorem, Dec. 9, 2003 (public availability date).

Affiliated with

Also associated with

Rating

Method and apparatus for plasma processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for plasma processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for plasma processing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4276803