Method and apparatus for planarization of a material by...

Details Method and apparatus for planarization of a material by... Method and apparatus for planarization of a material by...

2005-07-12

2005-07-12

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000

Reexamination Certificate

active

06916744

ABSTRACT:
A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.

REFERENCES:
patent: 4154192 (1979-05-01), Tsubouchi et al.
patent: 4992306 (1991-02-01), Hochberg et al.
patent: 5468670 (1995-11-01), Ryou
patent: 5489557 (1996-02-01), Jolley
patent: 5633212 (1997-05-01), Yuuki
patent: 5693578 (1997-12-01), Nakanishi et al.
patent: 5722157 (1998-03-01), Shouji et al.
patent: 5777300 (1998-07-01), Homma et al.
patent: 5851892 (1998-12-01), Lojek et al.
patent: 5862057 (1999-01-01), Xia et al.
patent: 6037273 (2000-03-01), Gronet et al.
patent: 6100132 (2000-08-01), Sato et al.
patent: 6265286 (2001-07-01), Boyer et al.
patent: 6306727 (2001-10-01), Akram
patent: 6458708 (2002-10-01), Jin
patent: 6492283 (2002-12-01), Raaijmakers et al.
patent: 6528387 (2003-03-01), Moriyasu et al.
patent: 6589877 (2003-07-01), Thakur
patent: 2002/0104822 (2002-08-01), Naydenkov et al.
patent: 2003/0015706 (2003-01-01), Morimoto
patent: 2004/0121605 (2004-06-01), Maydan et al.
patent: H11-251599 (1999-09-01), None
patent: 2002-33470 (2002-01-01), None
patent: 2002-261275 (2002-09-01), None
patent: 434793 (2001-05-01), None
PCT Search Report dated May 19, 2004 for PCT/US03/39247 (AMAT/8013PC).

Affiliated with

Also associated with

Rating

Method and apparatus for planarization of a material by... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for planarization of a material by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for planarization of a material by... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3402838