Method and apparatus for photomask fabrication

Details Method and apparatus for photomask fabrication Method and apparatus for photomask fabrication

2005-12-27

2005-12-27

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S041000, C216S059000, C430S005000, C430S030000, C438S725000

Reexamination Certificate

active

06979408

ABSTRACT:
The invention provides methods and apparatuses for controlling critical dimension (CD) uniformity of a photomask by neutralizing CD variation associated with pattern density and process fluctuation.

REFERENCES:
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patent: 2004/0038139 (2004-02-01), Mui et al.
Takahashi, et al., “Performance of JBX-9000MV with negative tone resist for 130 nm reticle”,Proceedings of SPIE, 20thAnnual BACUS Symposium on Photomask Technology, vol. 4186, pp. 22-33, Sep. 13-15, 2000.
Gujisawa, et al., Evaluation of loading effect of NLD dry etching (2),Proceedings of SPIE, 20thAnnual BACUS Symposium on Photomask Technology, vol. 4186, pp. 549-552, Sep. 13-15, 2000.

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