Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-05-02
2006-05-02
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S792000, C438S798000, C438S769000, C438S770000, C438S772000
Reexamination Certificate
active
07037861
ABSTRACT:
A method for oxidizing a nitride film is disclosed, which includes the steps of: providing a nitride film formed on an electrically conductive substrate; irradiating the nitride film with a light beam and getting close to the nitride film with a electrically conductive probe; and exerting a bias between the electrically conductive substrate and the electrically conductive probe. The method can oxidize the nitrides quickly and reduce the cost building a nano-structure in the nitride film. An apparatus for oxidizing a nitride film is also disclosed herewith.
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Chien Forest Shih-Sen
Tai Hung-Ming
Bacon & Thomas PLLC
Fourson George
Industrial Technology Research Institute
Maldonado Julio J.
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