Method and apparatus for multi-plane MRAM

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S158000, C365S173000

Reexamination Certificate

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10934243

ABSTRACT:
A memory device includes a first layer of MRAM memory cells arranged in accordance with an MRAM architecture, a second layer of MRAM memory cells that is fabricated over the first layer of MRAM memory cells, and a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device. The method of fabricating the memory device includes fabricating a first layer of MRAM memory cells arranged in accordance with an MRAM architecture, fabricating a second layer of MRAM memory cells over the first layer of MRAM memory cells, and fabricating a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device.

REFERENCES:
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6788605 (2004-09-01), Sharma et al.
patent: 2006/0002182 (2006-01-01), Frey

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