Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2007-12-04
2007-12-04
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S173000
Reexamination Certificate
active
10934243
ABSTRACT:
A memory device includes a first layer of MRAM memory cells arranged in accordance with an MRAM architecture, a second layer of MRAM memory cells that is fabricated over the first layer of MRAM memory cells, and a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device. The method of fabricating the memory device includes fabricating a first layer of MRAM memory cells arranged in accordance with an MRAM architecture, fabricating a second layer of MRAM memory cells over the first layer of MRAM memory cells, and fabricating a common connection associated with the first layer of MRAM memory cells and the second layer of MRAM memory cells that facilitates operation of the memory device.
REFERENCES:
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6788605 (2004-09-01), Sharma et al.
patent: 2006/0002182 (2006-01-01), Frey
Elms Richard T.
Luu Pho M.
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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