Method and apparatus for monitoring layer erosion in a dry-etchi

Details Method and apparatus for monitoring layer erosion in a dry-etchi Method and apparatus for monitoring layer erosion in a dry-etchi

1989-06-30

1990-08-14

Evans, F. L.

Optics: measuring and testing

By configuration comparison

With photosensitive film or plate

156626, G01B 1106

Patent

active

049482599

ABSTRACT:
A method and apparatus for monitoring layer erosion in a dry-etching process. The apparatus has a first electrode that is electrically connected to a substrate to be etched, as well as a second electrode that is located above the first electrode. Both electrodes are situated inside a process chamber. An optical photometer is positioned outside of the process chamber and directed onto the substrate in the process chamber. Signals received from the optical photometer are amplified by an electrical circuit and are edited and displayed with a Fourier transformation. The etching process can be automatically interrupted when received periodic signals having essentially constant amplitude and frequency undergo a significant change during the etching process of the upper layer. That is, they are received as signals signficantly deviating from one another, this being identified by the electrical circuit as the passage from one layer to another layer of the substrate during the dry-etching process.

REFERENCES:
patent: 4479848 (1984-10-01), Otsubo et al.
patent: 4496425 (1985-01-01), Kuyel
"Technologie Hochintegrierter Schaltungen", D. Widmann et al, Springer-Verlag Berlin Heidelberg New York, London, Paris, Tokyo, 1988, pp. 194-201.

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