Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-30
2007-10-30
Purvis, Sue A. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S285000, C438S299000, C438S300000
Reexamination Certificate
active
10925108
ABSTRACT:
A method and apparatus is presented that provides mobility enhancement in the channel region of a transistor. In one embodiment, a channel region (18) is formed over a substrate that is bi-axially stressed. Source (30) and drain (32) regions are formed over the substrate. The source and drain regions provide an additional uni-axial stress to the bi-axially stressed channel region. The uni-axial stress and the bi-axial stress are both compressive for P-channel transistors and both tensile for N-channel transistors. The result is that carrier mobility is enhanced for both short channel and long channel transistors. Both transistor types can be included on the same integrated circuit.
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Orlowski Marius K.
Venkatesan Suresh
Clingan, Jr. James L.
Erdem Fazli
Hill Daniel D.
Purvis Sue A.
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