Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1985-07-18
1986-09-02
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156345, 204298, 20419232, H01L 21306, B44C 122, C03C 1500, C03C 2506
Patent
active
046094288
ABSTRACT:
A microwave plasma etching method and apparatus for performing substantially anisotropic etching to form micropatterns on IC substrates. A microwave power source creates a plasma from a gas with a relatively low pressure such as 10.sup.-3 to 10.sup.-4 Torr, so that the mean free path of the gas molecules exceeds the dimensions of the etching apparatus. A magnetic field is generated in a plasma generating chamber, a reaction chamber where in the substrate is mounted and a connecting chamber. The plasma discharge is enhanced by a cyclotron resonance magnetic field intensity corresponding to the frequency of the microwave power applied to the plasma chamber. The magnetic field creates a magnetic mirror which prevents the electrons in the plasma from entering into the reaction chamber so as to eliminate the generation of free radicals in which the reaction chamber which adversely affect the anisotropic etching ability.
REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4512868 (1985-04-01), Fujimura et al.
Guarnieri et al., RF Ion Source, IBM Technical Disclosure Bulletin, vol. 24, No. 11B, Apr. 1982, pp. 5833-5835.
Miyamura et al., A 26-cm Electron-Cyclotron-Resonance Ion Source for Reactive Ion Beam Etching of SiO.sub.2 and Si, J. Vac. Sci., Technol., 20(4), Apr. 1982, pp. 986-988.
Fujitsu Limited
Powell William A.
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