Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-05-02
2006-05-02
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S714000
Reexamination Certificate
active
07037846
ABSTRACT:
A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes generating plasma from a gas species to produce a plasma exhaust. The plasma exhaust is then introduced into a processing chamber containing the wafer. The ion content of the plasma exhaust is enhanced by activating a supplemental ion source as the plasma is introduced into the processing chamber, thereby creating a primary plasma discharge therein. Then, the primary plasma discharge is directed into a baffle plate assembly, thereby creating a secondary plasma discharge exiting the baffle plate assembly. The strength of an electric field exerted on ions contained in the secondary plasma discharge is reduced. In so doing, the reduced strength of the electric field causes the ions to bombard the wafer at an energy insufficient to cause damage to semiconductor devices formed on the wafer.
REFERENCES:
patent: 4960540 (1990-10-01), Friel et al.
patent: 5010842 (1991-04-01), Oda et al.
patent: 5593540 (1997-01-01), Tomita et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5716534 (1998-02-01), Tsuchiya et al.
patent: 5788778 (1998-08-01), Shang et al.
patent: 5961851 (1999-10-01), Kamarehi et al.
patent: 5968275 (1999-10-01), Lee et al.
patent: 5980638 (1999-11-01), Janos
patent: 5997962 (1999-12-01), Ogasawara et al.
patent: 6057645 (2000-05-01), Srivastava et al.
patent: 6082374 (2000-07-01), Huffman et al.
patent: 6093281 (2000-07-01), Wise et al.
patent: 6182603 (2001-02-01), Shang et al.
patent: 6203657 (2001-03-01), Collison et al.
patent: 6217703 (2001-04-01), Kitagawa
patent: 6217704 (2001-04-01), Kitagawa
patent: 6225745 (2001-05-01), Srivastava
patent: 6239553 (2001-05-01), Barnes et al.
patent: 6412438 (2002-07-01), Kamarehi et al.
patent: 6432255 (2002-08-01), Sun et al.
patent: 6858112 (2005-02-01), Flamm et al.
Sakthievel Palanikumaran
Sawin Herbert Harold
Srivastava Aseem Kumar
Axcelis Technologies Inc.
Cantor & Colburn LLP
Deo Duy-Vu N.
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