Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-08-30
2011-08-30
Sarkar, Asok (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C118S715000, C118S728000, C118S730000, C438S503000, C438S507000
Reexamination Certificate
active
08008168
ABSTRACT:
A method for manufacturing a semiconductor device, comprising: loading a wafer to be subjected to film formation to a chamber; supporting the wafer to be spaced from a film formation position of the wafer; preliminarily heating the wafer while rotating a rotating member for rotating the wafer through a supporting member during the film formation at a predetermined rotational speed under a state of the wafer to be spaced from the film formation position; placing the wafer on the supporting member in the film formation position; and heating the wafer at a predetermined temperature and supplying a process gas onto the wafer while rotating the wafer.
REFERENCES:
patent: 3721210 (1973-03-01), Helms et al.
patent: 4962726 (1990-10-01), Matsushita et al.
patent: 5273588 (1993-12-01), Foster et al.
patent: 2002-043302 (2002-02-01), None
Ikeya Naohisa
Ito Hideki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
NuFlare Technology, Inc.
Sarkar Asok
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