Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-07
2006-11-07
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S795000
Reexamination Certificate
active
07132343
ABSTRACT:
The whole surface of an insulating substrate having an amorphous silicon film formed thereon is scanned/irradiated with a solid-state pulsed laser beam shaped linearly or rectangularly, to form a uniform fine poly-crystalline silicon film for forming a pixel region. The periphery of the pixel region is scanned/irradiated with a time-modulated continuous-wave solid-state laser beam formed linearly. Thus, a peripheral circuit region including a drive circuit is formed as a poly-crystalline silicon film with crystals growing up in the scanning direction. Pixel portion thin film transistors are produced in the uniform fine poly-crystalline silicon film, while a drive circuit or an interface circuit is produced in the peripheral circuit region. One of substrates of a display panel is formed thus. A display panel including transistors with uniform properties in the pixel portion and transistors with excellent properties in the peripheral circuit portion including the drive circuit is obtained.
REFERENCES:
patent: 5706076 (1998-01-01), Takeda
patent: 6713323 (2004-03-01), Yamazaki et al.
patent: 2002/0031878 (2002-03-01), Hara et al.
patent: 2002/0119609 (2002-08-01), Hatano et al.
patent: 2004/0253838 (2004-12-01), Yamazaki et al.
patent: 2005/0023531 (2005-02-01), Shoji et al.
patent: 2002-222959 (2002-08-01), None
patent: 2002-270505 (2002-09-01), None
patent: 2003-124136 (2003-04-01), None
patent: 2003-168645 (2003-06-01), None
patent: 2003-179068 (2003-06-01), None
F. Takeuchi, et al., “Performance of poly-Si TFTs Fabricated by a Stable Scanning CW Laser Crystallization”, TFT4-3, AM-LCD '01, pp. 251-254.
Hatano Mutsuko
Hongo Mikio
Ohkura Makoto
Saito Hiroshi
Yazaki Akio
Antonelli, Terry Stout and Kraus, LLP.
Blum David S.
Hitachi , Ltd.
Hitachi Displays Ltd.
LandOfFree
Method and apparatus for manufacturing display panel does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for manufacturing display panel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for manufacturing display panel will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3680381