Method and apparatus for low energy electron enhanced etching of

Details Method and apparatus for low energy electron enhanced etching of Method and apparatus for low energy electron enhanced etching of

1996-08-28

1999-03-16

Chang, Ceila

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 66, 216 67, 216 68, H05H 100

Patent

active

058825380

ABSTRACT:
A method of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.

REFERENCES:
patent: 4207158 (1980-06-01), Freeman
patent: 4259145 (1981-03-01), Harper
patent: 4450787 (1984-05-01), Weakliem
patent: 4496881 (1985-01-01), Cheever
patent: 4874459 (1989-10-01), Coldren
patent: 5003178 (1991-03-01), Livesay
patent: 5039376 (1991-08-01), Zukotynski
patent: 5145554 (1992-09-01), Seki
patent: 5368676 (1994-11-01), Nagaseki
patent: 5457298 (1995-10-01), Nelson
patent: 5497053 (1996-03-01), Tang
A.P. Webb & S. Veprek, Reactivity of Solid Silicon with Hydrogen Under Conditions of a Low Pressure Plasma, Chemical Physics Letter, 62 (1) p. 173 (1979).
S. Veprek & F.A. Sarott, Electron-Impact-Induced Anisotropic Etching of Silicon by Hydrogen, Plasma Chemistry & Plasma Processing, 2(3) p. 233 (1982).
H.P. Gillis, J.L. Clemons & J.P. Chamberlain, Low-Energy Electron Beam Enhanced Etching of Si(100)-(2.times.1) by Molecular Hydrogen, J.Vac. Sci. Technol. B 10(6), p. 2729 (1992).
H.P. Gillis et al., "Low Energy Electron-Enhanced Etching of GaN/Si in Hydrogen Direct Current Plasma", J. Electrochem Soc., vol. 143, No. 11, Nov. 1996.
H.P. Gillis, et al., "The Dry Etching of Group III-Nitride Wide-Bandgap Semiconductors"; Journal of Materials 38, 5D-55 (1996).
E. Wiberg et al., "Hydrides of the Elements of Main Groups I-IV", New York, 1971, Chapter 6, pp. 443-460.
P. Breisacher et al., "Comparative Stabilities of Gaseous Alane, Gallane, and Indane", Journal of American Chemical Society, pp. 4255-4258, 87:19, Oct. 5, 1965.
K. Choquette et al.,"Hydrogen Plasma Processing of GaAs and AlGaAs," J. Vac. Sci. Technol. B, vol. 11, No. 6, Nov./Dec. 1993, pp. 2025-2032.
J.R. Creighton, "Hydrogen Chemisorption and Reaction on GaAs(100)," J. Vac Sci. Technol. A8(6), Nov./Dec. 1990, pp. 3984-3987.
H.P. Gillis et al., "Highly Anisotropic, Ultra-Smooth Patterning of GaN/SiC by Low Energy Electron Enhanced Etching in DC Plasma", Journal of Electronic Materials, Mar. 1997 (Special Issue).
Heiji Watanabe et al., "Electron-beam-assisted Dry Etching For GaAs Using Electron Cyclotron Resonance Plasma Electron Source", Appl. Phys. Lett 61 (25), 21 Dec. 1992.
Veprek et al., "The Preparation of Thin Layers of Ge and Si By Chemical Hydrogen Plasma Transport", Solid State Electronics Pergamon Press 1968, vol. 11, pp. 683-684.
S. Veprek et al., "Parameters Controlling The Deposition of Amorphous and Microcrystalline Silicon in Si/H Discharge Plasmas", J. de Physique (Paris) 42, C4-251 (1981).
S. Veprek et al., "Highlights of Preparative Solid State Chemistry In Low Pressure Plasmas", Pure & Appln. Chemistry, vol. 54, No. 6, pp. 1197-1220, 1982.
H.P. Gillis et al., Low Energy Electron Enhanced Etching of Si(100) in Hydrogen/Helium Direct-Current Plasma, Appl. Phys. Lett 66 (19), 8 May 1995.

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