Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1998-11-24
2000-02-22
Breneman, Bruce
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 66, 216 67, 216 68, H05H 100
Patent
active
060276630
ABSTRACT:
A method-of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.
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Choutov Dmitri A.
Gillis Harry P.
Martin Kevin P.
Breneman Bruce
Georgia Tech Research Corporation
Zervigon Rudy
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