Method and apparatus for low energy electron enhanced etching an

Details Method and apparatus for low energy electron enhanced etching an Method and apparatus for low energy electron enhanced etching an

1997-12-03

2000-03-07

Gulakowski, Randy

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 156345, C23F 1002

Patent

active

060335874

ABSTRACT:
A method of low-damage, anisotropic etching and cleaning of substrates including mounting the substrate upon a mechanical support located within the positive column of a plasma discharge generated by either an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to the positive column, or electrically neutral portion, of a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

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