Method and apparatus for low energy electron enhanced...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07431796

ABSTRACT:
An apparatus for low-damage, anisotropic etching of substrates having the substrate mounted upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.

REFERENCES:
patent: 1712407 (1929-05-01), Skaupy
patent: 2037075 (1936-04-01), Haines
patent: 3304456 (1967-02-01), De Lany et al.
patent: 3879597 (1975-04-01), Bersin et al.
patent: 4031424 (1977-06-01), Penfold et al.
patent: 4207158 (1980-06-01), Freeman
patent: 4259145 (1981-03-01), Harper et al.
patent: 4298443 (1981-11-01), Maydan
patent: 4309267 (1982-01-01), Boyd et al.
patent: 4450787 (1984-05-01), Weakliem et al.
patent: 4464223 (1984-08-01), Gorin
patent: 4496881 (1985-01-01), Cheever
patent: 4609428 (1986-09-01), Fujimara
patent: 4863549 (1989-09-01), Grunwald
patent: 4871580 (1989-10-01), Schram et al.
patent: 4874459 (1989-10-01), Coldren et al.
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 4950376 (1990-08-01), Hayashi et al.
patent: 5003178 (1991-03-01), Livesay
patent: 5039376 (1991-08-01), Zukotynski et al.
patent: 5138169 (1992-08-01), Yamazaki et al.
patent: 5145554 (1992-09-01), Seki et al.
patent: 5241535 (1993-08-01), Yoshikawa
patent: 5279669 (1994-01-01), Lee
patent: 5290993 (1994-03-01), Kaji et al.
patent: 5298896 (1994-03-01), Lei et al.
patent: 5309232 (1994-05-01), Hartung et al.
patent: 5310452 (1994-05-01), Doki et al.
patent: 5331249 (1994-07-01), Minamikata et al.
patent: 5352953 (1994-10-01), Wakabayashi et al.
patent: 5368676 (1994-11-01), Nagaseki et al.
patent: 5418423 (1995-05-01), Murray
patent: 5453305 (1995-09-01), Lee
patent: 5457298 (1995-10-01), Nelson et al.
patent: 5485210 (1996-01-01), Lim et al.
patent: 5497053 (1996-03-01), Tang et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5572088 (1996-11-01), Aizawa et al.
patent: 5606370 (1997-02-01), Moon
patent: 5631978 (1997-05-01), Galand et al.
patent: 5660744 (1997-08-01), Sekine et al.
patent: 5882538 (1999-03-01), Martin et al.
patent: 5890102 (1999-03-01), Kossentini et al.
patent: 5906684 (1999-05-01), Tamura et al.
patent: 5917285 (1999-06-01), Gillis et al.
patent: 5983828 (1999-11-01), Savas
patent: 6033587 (2000-03-01), Martin et al.
patent: 6231777 (2001-05-01), Kofuji et al.
patent: 6258287 (2001-07-01), Martin et al.
P. Breisacher et al. “Comparative Stabilities of Gaseous Alane. Gallane and Indane” Journal of the American Chemical Society pp. 4255-4258 87:19 Oct. 5, 1965.
S. Veprek et al. “The Preparation of Thin Layers of Ge and Si by Chemical Hydrogen Plasma Transport.” Solid-State Electronics Pergamon Press 1968 vol. 11 pp. 683-684.
E. Wiberg et al “Hydrides of the Elements of Main Groups I-IV” New York 1971 Chapter 6 pp. 443-460.
A.P. Webb “Reactivity of Solid Silicon with Hydrogen Under Conditions of a Low Pressure Plasma.” Chemical Physics Letters vol. 62 No. 1 Mar. 15, 1979 pp. 173-177.
S. Veprek et al. “Parameters Controlling the Deposition of Amorphous and Microcrystalline Silicon in Si/H Discharge Plasmas.” Journal De Physique (Paris) 42 C4-251 (1981).
S. Veprek et al “Electron-Impact-Induced Anisotropic Etching of Silicon by Hydrogen” Plasma Chemistry and Plasma Processing vol. 2 No. 3 1982.
S. Veprek “Highlights of Preparative Solid State Chemistry in Low Pressure Plasmas.” Pure & Appl. Chem. vol. 54 No. 6 pp. 1197-1220. 1982.
J.R. Creighton “Hydrogen Chemisorption and Reaction on GaAs(100).” J. Vac. Sci. Technol. A 8 (6) Nov./Dec. 1990 pp. 3984-3987.
H.P. Gillis et al “Low-Energy Electron Beam Enhanced Etching of Si(100)-(2x1) by Molecular Hydrogen” J. Vac. Sci. Technol B. vol. 10 No. 6. Nov./Dec. 1992.
H. Watanabe et al “Electron-beam-assisted Dry Etching for GaAs using Electron Cyclotron Resonance Plasma Electron Source” Appl Phys. Lett 61 (25) Dec. 21, 1992 pp. 3011-3013.
K. Choquette et al “Hydrogen Plasma Processing of GaAs and A1GaAs” J. Vac. Sci. Technol B. vol. 11 No. 6 Nov./Dec. 1993 pp. 2025-2032.
H.P. Gillis et al. “Low Energy Electron-Enhanced Etching of Si(100) in Hydrogen/Helium Direct-Current Plasma.” Appl. Phys. Lett. 66 (19) May 8, 1995.
H.P. Gillis et al. “The Dry Etching of Group III-Nitride Wide-Bandgap Semiconductors” Journal of Materials 48 50-55 (1996).
H.P. Gillis et al “Low Energy Electron-Enhanced Etching of GaAs(100) In a Chlorine/Hydrogen DC Plasma.” Appl. Phys. Lett 68(16) Apr. 15, 1996.
H.P. Gillis et al “Low Energy Electron-Enhanced Etching of GaN/Si in Hydrogen Direct Current Plasma” J. Electrochem Soc. vol. 143. No. 11 Nov. 1996.
H.P. Gillis et al “Highly Anisotropic, Ultra-smooth Patterning of GaN/SiC by Low Energy Electron Enhanced Etching in DC Plasma” J. Electronic Mat 26, 301-305 (1997) pp. 1-16.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for low energy electron enhanced... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for low energy electron enhanced..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for low energy electron enhanced... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4003514

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.