Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-11-07
2008-08-05
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000
Reexamination Certificate
active
07407891
ABSTRACT:
Semiconductor wafers are leveled by position-dependent measurement of a wafer-characterizing parameter to determine the position-dependent value of this parameter over an entire surface of the semiconductor wafer, etching the entire surface of the semiconductor wafer simultaneously under the action of an etching medium with simultaneous illumination of the entire surface, the material-removal etching rate dependent on the light intensity at the surface of the semiconductor wafer, the light intensity being established in a position-dependent manner such that the differences in the position-dependent values of the parameter measured in step a) are reduced by the position-dependent material-removal rate. Semiconductor wafers with improved flatness and nanotopography, and SOI wafers with improved layer thickness homogeneity are produced by this process.
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English Derwent Abstract AN 2000-015536 corresponding to DE 198 23 904 A1 and EP 0 961 314 A1.
Bauer Theresia
Hoelzl Robert
Huber Andreas
Wahlich Reinhold
Brooks & Kushman P.C.
Chen Kin-Chan
Siltronic AG
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